CHUBU UNIVERSITY
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NAKANO Yoshitaka

Profile

Title Professor
Belong to Dept. of Electrical and Electronic Engineering
Dept. of Electronics and Information Engineering
Electrical and Electronic Engineering (graduate school)
Institute of Science and Technology Research
Graduated Waseda University, Graduate School of Science and Engineering
Degree Doctor of Engineering
Academic Institutional Membership Japan Society of Applied Physics
American Vacuum Society
Electrochemical Society
Materials Research Society
Field of Study Semiconductor Devices and Materials
Research, Studies Wide Bandgap Semiconductors, Oxide and Nitride Electronics
Curriculum Specialized Quantum Electronic Physics, Advanced Nano-Devices and Materials Characterization, Introduction to Nano-Technology

Books Published, Translation

Y.Nakano: Trends in Applied Spectroscopy Vol.9, "Steady-State Photo-Capacitance Spectroscopy Investigation of Carbon-Related Deep-Level Defects in AlGaN/GaN Hetero-Structures Grown by MOCVD", Research Trends, 2013.

N.Matsuki, Y.Nakano, Y.Irokawa, M.Lozac'h, M.Sumiya: Solar Cells - New Aspects and Solutions, "Chapter 14: Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells" (Co-author), Intech, 2011.

Y.Nakano, T.Morikawa, T.Ohwaki: Recent Research Developments in Materials Science Vol. 7, "Chapter 3: Visible-Light Sensitivity in N-Doped ZnO Films"(Co-author), Research Signpost, 2007.

Y.Nakano: Recent Research Developments in Applied Physics Vol. 8, "Chapter 2: Ion-Implantation Doping and Gate Insulators for GaN Power Devices", Transworld Research Network, 2006.

Academic Papers, Critique

Original Papers (2000~)

K.Sano, M.Niibe, R.Kawakami, Y.Nakano: "Recovery of x-ray absorption spectral profile in etched TiO2 thin films", Journal of Vacuum Science & Technology A 33, 031403 (2015).

M.Chen, Y.Qiua, S.Yua, Y.Nakano, K.Nakamura: "A comparative study on GaN luminescence under/after inductively coupled plasma exposure", Philosophical Magazine Letters 95, 161-167 (2015).

R.Kawakamia, Y.Nakanob, M.Niibe, T.Shirahama, T.Mukai: "Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments", ECS Solid State Letters, 4 (4), 36-38 (2015).

M.Sumiya, T.Honda, L.Sang, Y.Nakano, K.Watanabe, F.Hasegawa: "Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate", Physica Status Solidi A, 1–6 (2015). / DOI 10.1002/pssa.201431732

M.Chen, Y.Qiua, S.Yua, Y.Nakano, K.Nakamura: "In situ measurement of GaN film photoluminescence under plasma etching", Philosophical Magazine Letters 94(12), 772-778 (2014).

M.Chen, K.Nakamura, Y.Qiu, D.Ogawa, R.Kawakami, M.Niibe, Y.Nakano: "Optical and electrical investigation of Ar+-irradiated GaN", Applied Physics Express 7, 111003 (2014).

R.Kawakamia, M.Niibeb, Y.Nakanoc, T.Shirahamaa, K.Aokia, K.Obaa, M.Takabatakea, T.Mukaid: "Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas", Thin Solid Films 570, 81–86 (2014).

X.Huang, Y.Guo, J.Zhang, Y.Nakano, H.Sugai, K.Nakamura: "In situ monitoring of GaN substrate surface in ICP containing energetic electrons", Applied Surface Science Volume 292, 387–389 (2014).

M.Chen, K.Nakamura, Y.Nakano, Y.Qiu, Z.Jiao: "Photoluminescence of n-type GaN film in an argon plasma", Philosophical Magazine: Letters 94, p.182-187 (2014).

R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, T.Yamada, K.Aoki, M.Takabatake, K.Tominaga, T.Mukai:"Damage characteristics of n-GaN thin film surfaces etched by N2 plasmas", Physica Status Solidi C 10, 1553–1556 (2013).

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, A.Takeichi, K.Tominaga, T.Mukai: "Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas", Japanese Journal of Applied Physics 52, 05EC05 (2013).

M.Niibe, K.Sano, T.Kotaka, R.Kawakami, K.Tominaga, Y.Nakano: "Etching Damage and Its Recovery by Soft X-ray Irradiation Observed in Soft X-ray Absorption Spectra of TiO2 Thin Film", Journal of Applied Physics 113, 126101 (2013).

M.Lozac'h, Y.Nakano, L.Sang, K.Sakoda, M.Sumiya: "Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defects evaluation under light irradiation", Physica Status Solidi (a) 210, 470-473 (2013). [front cover design]

Y.Nakano, K.Nakamura, M.Niibe, R.Kawakami, N.Ito, T.Kotaka, K.Tominaga: "Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN", ECS Journal of Solid State Science and Technology 2, 110-113 (2013).

M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Inaoka, K.Tominaga, T.Mukai: "Damage Analysis of n-GaN Crystal Etched with He and N2 Plasma", Japanese Journal of Applied Physics 52, 01AF04 (2013).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures", Journal of Applied Physics 112, 106103 1-3 (2012).

M.Lozac'h, Y.Nakano, L.Sang, K.Sakoda, M.Sumiya: "Study of Defect Levels in Band Gap for Thicker InGaN Film", Japanese Journal of Applied Physics 51, 121001 1-5 (2012).

M.Chen, K.Nakamura, Y.Nakano, S.Yu, H.Sugai: "In-situ photoluminescence monitoring of GaN in plasma exposure", Applied Physics Letters 101, 071105 1-4 (2012).

M.Chen, K.Nakamura, Y.Nakano, G.Zhang, H.Sugai: "In-situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique", Applied Physics Express 5, 076201 1-3 (2012).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures", Electrochemical and Solid-State Letters 15(2), HH44-47 (2011).

Y.Nakano, M.Lozac'h, N.Matsuki, K.Sakoda, M.Sumiya: "Photo-capacitance spectroscopy study of deep-level defects in free-standing n-GaN substrates using transparent conductive polymer Schottky contacts", Journal of Vaccum Science and Technology B 29, 023001 (2011).

Y.Guo, K.Nakamura, J.Zhang, Y.Nakano, H.Sugai: "Influence of High-Energy Secondary Electrons in Plasma Immersion Ion Implantation", Japanese Journal of Applied Physics 50, 01AA02 (2011).

Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: "Deep-Level Characterization of n-GaN Epitaxial Layers using Transparent Conductive Polyanikine Schottky Contacts", Japanese Journal of Applied Physics 50, 01AD02 (2011).

N.Matsuki, Y.Irokawa, Y.Nakano, M.Sumiya: "π-conjugated polymer/GaN Schottky solar cells", Solar Energy Materials & Solar Cells 95, 284-287 (2011).

N.Matsuki, Y.Nakano, Y.Irokawa, M.Sumiya: "Heterointerface Properties of Novel Hybrid Solar Cells Consisting of Transparent Conductive Polymer and III-Nitride Semiconductor", Journal of Nonlinear Optical Physics & Materials 19(4) 703-711 (2010).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Photo-Capacitance Spectroscopy Investigation of Deep-Level Defects in AlGaN/GaN hetero- structures with different current collapses", physica status solidi (Rapid Research Letters 4, 374-376 (2010).

Y.Nakano: "Deep-Level Optical Spectroscopy Investigation of Degradation Phenomena in Tris(8-hydroxy quinoline) Aluminum-Based Organic Light-Emitting Diodes", Applied Physics Express 2, 092103 (2009).

Y.Irokawa, N.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano: "Low-Frequency Capacitance-Voltage Study of Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes", Physica Status Solidi (Rapid Research Letters) 3, 266-268 (2009).

Y.Nakano, S.Saeki, T.Morikawa: "Optical bandgap widening of p-type Cu2O films by nitrogen doping", Applied Physics Letters 94, 022111 (2009).

Y.Nakano, Y.Irokawa, M.Takeguchi: "Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces", Applied Physics Express 1, 091101 (2008).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: "Emissive Interface States in Organic Light-Emitting Diodes Based on Tris(8-Hydroxyquinoline) Aluminum", Japanese Journal of Applied Physics 47(1), 464 (2008).

A.Uedono, K.Ito, H.Nakamori, K.Mori, Y.Nakano, T.Kachi, S.Ishibashi, T.Ohdaira, R.Suzuki: "Annealing Properties of Vacancy-Type Defects in Ion-Implanted GaN Studied by Monoenergetic Positron Beams", Journal of Applied Physics 102, 084505 (2007).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: "Deep-Level Characterization of Emissive Interface States in Alq3-Based OLEDs", physica status solidi (Rapid Research Letters) 1, 196 (2007).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Origin in Visible-Light Sensitivity in N-Doped TiO2 Films", Chemical Physics 339, 20 (2007). /invited/

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki, Y.Taga: "Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping", Japanese Journal of Applied Physics 46(4B), 2636 (2007).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki, Y.Taga: "Trap Levels in Tris(8-Hydroxyquinoline) Aluminum Studied by Deep-Level Optical Spectroscopy", Applied Physics Letters 88, 252104 (2006).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Electrical Characterization of p-Type N-Doped ZnO Films Prepared by Thermal Oxidation of Sputtered Zn3N2 Films", Applied Physics Letters 88, 172103 (2006).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Deep-Level Characterization of N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering", Applied Physics Letters 87, 232101 (2005).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Electrical Characterization of Band Gap States in C-Doped TiO2 Films", Applied Physics Letters 87, 052111 (2005).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Deep-Level Optical Spectroscopy Investigation of N-Doped TiO2 Films", Applied Physics Letters 86, 132104 (2005).

Y.Irokawa, O.Fujishima, T.Kachi, Y.Nakano: "Electrical Activation Characteristics of Silicon-Implanted GaN", Journal of Applied Physics 97, 083505 (2005).

Y.Nakano, O.Fujishima, T.Kachi, K.Abe, O.Eryu, K.Nakashima, T.Jimbo: "N-Type Doping Characteristics of O-Implanted AlGaN", Journal of The Electrochemical Society 151, G801 (2004).

Y.Nakano, O.Fujishima, T.Kachi: "Effect of Activation Ambient on Acceptor Levels in Mg-Doped GaN", Journal of Applied Physics 96, 415 (2004).

Y.Nakano, O.Fujishima, T.Kachi: "High-Temperature Annealing Behavior of p-Type Doping Characteristics in Mg-Doped GaN", Journal of The Electrochemical Society 151, G574 (2004).

Y.Irokawa, Y.Nakano, M.Ishiko, T.Kachi, J.Kim, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, C.-C.Pan, G.-T.Chen, and J.-I.Chyi: "MgO/p-GaN Enhancement Mode Metal-Oxide-Semiconductor", Applied Physics Letters 84, 2919 (2004).

Y.Nakano, T.Kachi, T.Jimbo: "N-Type Doping Characteristics of O-Implanted GaN", Journal of Vacuum Science and Technology B 21, 2602 (2003).

Y.Nakano, T.Kachi, T.Jimbo: "Characteristics of SiO2/n-GaN Interfaces with b-Ga2O3 Interlayers", Applied Physics Letters 83, 4336 (2003).

Y.Nakano, T.Kachi, T.Jimbo: "Inversion Behavior in Thermally Oxidized p-GaN Metal-Oxide-Semiconductor Capacitors", Journal of Vacuum Science and Technology B 21, 2220 (2003).

Y.Nakano, T.Kachi, T.Jimbo: "Electrical Properties of Thermally Oxidized p-GaN Metal-Oxide-Semiconductor Diodes", Applied Physics Letters 82, 2443 (2003).

Y.Nakano, T.Kachi, T.Jimbo: "Effect of Be++O+ Co-Implantation on Be Acceptors in GaN", Applied Physics Letters 82, 2082 (2003).

Y.Nakano, T.Jimbo: "Electrical Properties of SiO2/n-GaN Metal-Insulator-Semiconductor Diodes", Journal of Vacuum Science and Technology B 21, 1364 (2003).

Y.Nakano, T.Jimbo: "Interface Properties of Thermally Oxidized n-GaN Metal-Oxide-Semiconductor Capacitors", Applied Physics Letters 82, 218 (2003).

Y.Nakano, T.Jimbo: "Electrical Characterization of Acceptor Levels in Be-Implanted GaN", Applied Physics Letters 81, 3990 (2002).

Y.Nakano, T.Jimbo: "Electrical Characterization of Acceptor Levels in Mg-Doped GaN", Journal of Applied Physics 92, 5590 (2002).

Y.Nakano, M.Ishiko, H.Tadano: "Deep Level Centers in Silicon Introduced by High-Energy He Irradiation and Subsequent Annealing", Journal of Vacuum Science and Technology B 20, 379 (2002).

Y.Nakano, T.Jimbo: "Structural Defects and Electrical Properties of N/Ge Co-Implanted GaN", Defect and Diffusion Forum 206-207, 75 (2002). /invited/

Y.Nakano, T.Jimbo: "Co-Implantation of Si+N into GaN for N-Type Doping", Journal of Applied Physics 92, 3815 (2002).

Y.Nakano, T.Kachi, T.Jimbo: "N/Ge Co-Implantation into GaN for N-Type Doping", Japanese Journal of Applied Physics 41, 2522 (2002).

Y.Nakano, T.Jimbo: "Interface Properties of SiO2/n-GaN Metal-Insulator-Semiconductor Structures", Applied Physics Letters 80, 4756 (2002).

Y.Nakano, T.Kachi: "Defects in N/Ge Coimplanted GaN Studied by Positron Annihilation", Journal of Applied Physics 91, 884 (2002).

Y.Irokawa, Y.Nakano: "Observation of Inversion Behavior in N-Type GaN Planar Metal-Insulator-Semiconductor Capacitor", Solid-State Electronics 46, 1467 (2002).

Y.Nakano, T.Kachi: "Current Deep-Level Transient Spectroscopy Investigation of Acceptor Levels in Mg-Doped GaN", Applied Physics Letters 79, 1631 (2001).

Y.Nakano, R.K.Malhan, T.Kachi, H.Tadano: "Effect of C and B Sequential Implantation on the B Acceptors in 4H-SiC", Journal of Applied Physics 89, 5961 (2001).

Y.Nakano, T.Kachi: "Effect of N/Ge Co-Implantation on the Ge Activation in GaN", Applied Physics Letters 79, 1468 (2001).

Y.Nakano, M.Ishiko, H.Tadano, U.Myler, P.Simpson: "Thermal Behavior of He-Irradiated Defects in Silicon", Journal of Crystal Growth 210, 80 (2000).

Proceedings (2000~)

M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: "Etching Damage Analysis of n-GaN Crystals Etched with N2-Plasma Using Soft X-Ray Absorption Spectroscopy",

Proceedings of International Symposium of Dry Process 2014, pp.75-76,(2014).

R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, S.Hirai, T.Mukai: "Morphological and Compositional Changes in AlGaN Surfaces Etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas", Proceedings of International Symposium of Dry Process 2014, pp.69-70 (2014).

D.Ogawa, Y.Nakano, K.Nakamura:“Effect of Liquid Nitrogen Cooling on GaN Film Exposed in Low Pressure Plasma”, Proceedings of International Symposium of Dry Process 2014, pp.67-68 (2014).

Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai: "Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures", Materials Research Society Symposium Proceedings 1635, MRSF13-1635-T02-08 (2014).

Yoshitaka Nakano, Liwen Sang, Masatomo Sumiya: "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications", Materials Research Society Symposium Proceedings 1635, MRSF13-1635-T06-02 (2014).

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, H.Takeuchi, T.Shirahama, T.Yamada, T.Tominaga: "Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas", Journal of Physics: Conference Series 441, 012038 (2013).

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, A.Takeichi, K.Tominaga, T.Mukai, "Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas", Proceedings of International Symposium of Dry Process 2012, 133-134 (2012).

Y.Nakano: "Correlation between Deep-Level Defects and Carrie Trapping in AlGaN/GaN Hetero-Structures", 11th International Symposium on Advanced Technology Proceedings 107-108 (2012). /invited/

M.Sumiya, A.Uedono, Y.Nakano, T.Honda: "Potential of III-V Nitride Films for the Application to Photovoltaic Device", 11th International Symposium on Advanced Technology Proceedings 109-110 (2012). /invited/

Y.Nakano, R.Kawakami, M.Niibe, A.Takeichi, T.Inaoka, K.Tominaga: "Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching", Materials Research Society Symposium Proceedings 1396, 1396-o07-36 1-6 (2012).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, and H.Kawai: "Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer Layers", Materials Research Society Symposium Proceedings 1396, 1396-o07-37 1-6 (2012).

Y.Nakano, M.Lozac'h, N.Matsuki, K.Sakoda, M.Sumiya: "Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts", Materials Research Society Symposium Proceedings 1309, 1309-ee06-41 1-6 (2011).

Y.Nakano,Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai: "Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy", Materials Research Society Symposium Proceedings 1309, 1309-ee06-40 1-6 (2011).

Y.Irokawa, M.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano: "Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen", physica status solidi (c) 7, 1928-1930 (2010).

Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: "Electrical Characterization of n-GaN Using Transparent Polyaniline Schottky Contacts", physica status solidi (c) 7, 2007-2009 (2010).

Y.Nakano: "Intrinsic Degradation in Alq3-Based OLEDs Probed by Deep-Level Optical Spectroscopy", Materials Research Society Symposium Proceedings Vol.1212, 1212-S03-01 (2010).

Y.Nakano, Y.Irokawa, M.Takeguchi: "Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy", Materials Research Society Symposium Proceedings Vol.1202, 1202-I09-03 (2010).

Y.Nakano, S.Saeki, T.Morikawa: "Nitrogen-Doping Induced Optical Bandgap Widening of P-Type Cu2O Films", Materials Research Society Symposium Proceedings Vol.1217, 1217-Y03-38 (2010).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki, Y.Taga: "Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping", Materials Research Society Symposium Proceedings Volume 965E, S09-21 (2007). [Electronic paper]

Y.Nakano, T.Morikawa, T.Ohwaki: "Visible-Light Sensitivity in N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering", Materials Research Society Symposium Proceedings Volume 957, K07-57 (2007).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Band-Gap Narrowing of TiO2 Films Induced by N Doping", Physica B: Condensed Matter 376-377, 823 (2006).

Y.Irokawa, Y.Nakano, M.Ishiko, T.Kachi, J.Kim, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, C.-C.Pan, G.-T.Chen, J.-I.Chyi: "GaN Enhancement Mode Metal-Oxide Semiconductor Field Effect Transistors", Physica Status Solidi (c) 2, 2668 (2005).

Y.Nakano, T.Kachi, T.Jimbo: "Defects in N/Ge and N/Si Co-Implanted GaN", Materials Science in Semiconductor Processing 6, 515 (2004).

Y.Nakano, T.Jimbo: "Electrical Characterization of Acceptor Levels in Mg-Doped GaN", Physica Status Solidi (c) 0, 438 (2002).

Y.Nakano, T.Jimbo: "Inversion Behavior in SiO2/n-GaN Metal-Insulator-Semiconductor Structures", Physica Status Solidi (b) 234, 859 (2002).

Y.Nakano, T.Kachi, T.Jimbo: "Doping Characteristics and Structural Defects in N/Ge Co-Implanted in GaN", Institute of Physics Conference Series No.170 Chapter 9 (2002). [CD-ROM]

Y.Nakano, T.Kachi, H.Tadano, R.K.Malhan: "Effect of C/B Co-Implantation on the B Acceptors in 4H-SiC", Materials Research Society Symposium Proceedings 640 (2001) [CD-ROM].

Y.Nakano, T.Kachi, H.Tadano, R.K.Malhan: "Effect of C/B Sequential Implantation on the B acceptor in 4H-SiC", Journal of Crystal Growth 210, 283 (2000).

Lectures, Symposium, Presentation

International Conferences(2000~)

Y.Nakano, Y.Irokawa, M.Sumiya, S.Yagi, H.Kawai: "Carbon-Related Deep-Level Defects and Carrier-Trapping Characteristics in AlGaN/GaN Hetero-Structures", 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015), Nagoya, March 28 (2015).

Y.Nakano, M.Chen, D.Ogawa, K.Nakamura, R.Kawakami, M.Niibe: "Generation Behavior of Deep-Level Defects in Ar+-Irradiated GaN", 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015), Nagoya, March 28 (2015).

M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: "Etching Damage Analysis of n-GaN Crystals Etched with N2-Plasma Using Soft X-Ray Absorption Spectroscopy", International Symposium of Dry Process 2014, Tokyo, November (2014).

R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, S.Hirai, T.Mukai: "Morphological and Compositional Changes in AlGaN Surfaces Etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas", International Symposium of Dry Process 2014, Tokyo, November (2014).

D.Ogawa, Y.Nakano, K.Nakamura:“Effect of Liquid Nitrogen Cooling on GaN Film Exposed in Low Pressure Plasma", International Symposium of Dry Process 2014, November (2014).

S.Hirai, M.Niibe, T.Shirahama, R.Kawakami, Y.Nakano, T.Mukai: "Surface Analysis of Thick AlGaN Films Treated by Ar and CF4 Plasma Etching", The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. (2014).

M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: "Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-ray Absorption Spectroscopy", The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. (2014).

K.Sano, M.Niibe, R.Kawakami, Y.Nakano: "Spectral Recovery of Etching Damage of TiO2 Thin Films Observed in XAS Spectra",

The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. (2014).

F.Hasegawa, Y.Nakano, T.Honda, M.Sumiya: "Influence of GaN/InGaN Hetero Interface on an InGaN Solar Cell", International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw Poland, August 25 (2014).

M.Sumiya, L.Sang, F.Hasegawa, Y.Nakano, "Effect of Strain on Solar Cell Performance for GaN/InGaN/GaN Structures", International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw Poland, August 25 (2014).

Y.Nakano, Y.Irokawa, M.Sumiya, Y.Sumida, S.Yagi, H.Kawai: "Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations", 2013 Materials Research Society Fall meeting (2013.12, Boston, USA).

Y.Nakano, L.Sang, M.Sumiya, F.Hasegawa: "Electrical Characterization of p-i-n Junction Based on Thick i-InGaN Film for Photovoltaic Applications", 2013 Materials Research Society Fall meeting (2013.12, Boston, USA).

Y.Nakano, L.Sang, M.Sumiya: "Deep-Level Characterization of Thick InGaN Films with Various In Contents for Photovoltaic Applications", 2013 Materials Research Society Fall meeting (2013.12, Boston, USA).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures", 10th Topical Workshop on Heterostructure Microelectronics (2013.9, Hakodate).

Y.Nakano, M.Niibe, M.Lozac'h, L.Sang, M.Sumiya: "Electrical Investigation of p-i-n Junction Based on Thick i-InGaN Film", 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2013.6, Kanazawa).

Y.Nakano, M.Niibe, M.Lozac'h, L.Sang, M.Sumiya: "Electrical Characterization of Thick InGaN Films with Various In Contents for Photovoltaic Applications", 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2013.6, Kanazawa).

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, T.Shirahama, K.Tominaga, T.Mukai: "Damage Characteristics of n-GaN Thin Film Surfaces Etched by Ultraviolet Light-assisted Helium Plasmas", 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2013.6, Kanazawa).

M.Niibe, K.Sano, T.Kotaka, R.Kawakami, K.Tominaga, Y.Nakano: "Etching Damage and Its Recovery by Soft X-ray Irradiation Observed in Soft X-ray Absorption Spectra of TiO2 Thin Film", 38th International Conference on International conference on Vacuum Ultraviolet and X-ray Physics (2013.7, China).

M.Sumiya, Y.Nakano, L.Sang, M.Lozac'h, F.Hasegawa: "Electrical characterization of InGaN p-i-n junction and solar cell property", 6th Asia-Pacific Workshop on Widegap Semiconductor (2013.5, Taiwan)

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, T.Shirahama, T. Yamada, K. Tominaga, T. Mukai: "Damage Characteristics of n-GaN Thin Film Surfaces Etched by N2 Plasmas", International Symposium on Compound Semiconductors 2013 (2013.5, Kobe).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures", 40th International Symposium on Compound Semiconductors (2013.5, Kobe).

Y.Nakano, K.Nakamura, M.Niibe, R.Kawakami, N.Ito, T.Kotaka, K.Tominaga: "Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2013.1, Nagoya).

M.Chen, K.Nakamura, Y.Nakano, H.Sugai: "In-situ photo luminescence observation of GaN thin film exposed in inductively-coupled plasmas", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2013.1, Nagoya).

Y.Nakano, M.Niibe, M.Lozac’h, L.Sang, M.Sumiya: "Deep level investigation of thick InGaN films", 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2013.1, Nagoya).

K.Nakamura, M.Chen, Y.Nakano, H.Sugai: "In-situ Photoluminescence Measurements of GaN Films Exposed to Inductively-Coupled Plasmas", 34th International Symposium on Dry Process (2012.11, Tokyo).

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, A.Takeichi, K.Tominaga, T.Mukai: "Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas", 34th International Symposium on Dry Process (2012.11, Tokyo).

K.Nakamura, M.Chen, Y.Nakano, H.Sugai: "In-situ Monitoring of Surface Modification of GaN Films Exposed to Inductively-Coupled Plasmas", 65th Annual Gaseous Electronics Conference (2012.10, USA)

Y.Nakano: "Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures (invited)", 11th International Symposium on Advanced Technology (2012.10, Tokyo).

M.Sumiya, A.Uedono, Y.Nakano, T.Honda: "Potential of III-V Nitride Films for the Application to Photovoltaic Device (invited)", 11th International Symposium on Advanced Technology (2012.10, Tokyo).

M.Niibe, T.Kotaka, K.Sano, R.Kawakami, K.Tominaga, Y.Nakano: "Etching Damage Analysis of TiO2 thin film with Soft X-ray Absorption Spectroscopy", 25th International Conference on Atomic Collisions in Solids (2012.10, Kyoto).

Y.Nakano, K.Nakamura, M.Niibe, R.Kawakami, N.Ito, T.Kotaka, K.Tominaga: "Effect of UV irradiation on Ar-plasma etching of GaN", International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo).

Y.Nakano, M.Lozac’h, L.Sang, M.Sumiya: "Electrical investigation of band-gap states in thicker InGaN films", International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures", International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo).

R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, T.Shirahama, T.Yamada, K.Tominaga: "Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas", 11th Asia Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials (2012.10, Kyoto).

M.Sumiya, L.Sang, M.Lozac’h, Y.Nakano: "Growth and deep level defect evaluation of InGaN films for the application of photovoltaic devices", 4th International Symposium on Growth of III-Nitrides (2012.7, Russia).

M.Chen, K.Nakamura, Y.Nakano, H.Sugai: "In-situ photoluminescence monitoring of GaN in plasma exposure", 4th International Conference on Microelectronics and Plasma Technology (2012.7, Korea).

M.Lozac'h, Y.Nakano, L.Sang, K.Sakoda, M.Sumiya: "Schottky properties enhanced by using compensated Mg doped InGaN thin films material at interface metal-InGaN", 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures", 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).

M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Inaoka, K.Tominaga, T.Mukai: "Damage Analysis of n-GaN Crystals Etched with He and N2 Plasma", 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).

M.Chen, K.Nakamura, Y.Nakano, H.Sugai: "In-situ observation of optical fluorescence of GaN thin film induced by photoluminescence technique in plasma condition", 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).

Y.Nakano, R.Kawakami, M.Niibe, A.Takeichi, T.Inaoka, K.Tominaga: "Photoluminescence Study of Plasma-Induced Etching Damages in GaN", Materials Research Society 2011 Fall Meeting (2011.11, USA).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, and H.Kawai: "Steady-State Photo-capacitance Spectroscopy Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions", Materials Research Society 2011 Fall Meeting (2011.11, USA).

Y.Guo, Q.Yang, J.Zhang, D.Wang, Y.Nakano, H.Sugai, K. Nakamura, J.Shi: "In situ monitoring damage density of GaN substrate surface in ICP containing energetic electrons", The 20th International Symposium on Plasma Chemistry (2011.7, USA).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, and H.Kawai: "Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy", 9th International Conference on Nitride Semiconductors (2011.7, UK).

M.Lozac'h, Y.Nakano, K.Sakoda and M.Sumiya: "Properties of III-V nitride thin film Schottky solar cells using transparent conductive polymer", 5th Asia-Pacific Workshop on Widegap Semiconductors (2011.5, Toba).

J.S.Gao, T.Kondou, N.Ito, Y.Nakano, K.Naamura, H.Sugai: "Generation of High Energy Electron Beams and Its Application for Cathode Luminescence Measurements of Gallium Nitride Semiconductor in Inductively-Coupled Plasmas", 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2011.3, Nagoya).

N.Ito, J.Gao, Y.Nakano, K.Nakamura, H.Sugai: "Photoluminescence Study of Plasma-Induced Damage in GaN", 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2011.3, Nagoya).

Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: "Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy", 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2011.3, Nagoya).

J.S.Gao, T.Kondou, N.Ito, Y.Nakano, K.Nakamura, H.Sugai: "Generation of High Energy Electron Beams and Its Application for Cathode Luminescence Measurements of Gallium Nitride Semiconductor in Inductively-Coupled Plasmas", 4th International Conference on Plasma-NanoTechnology & Science (2011.3, Takayama).

Y.Nakano: "Deep-Level Optical Spectroscopy Investigation of Intrinsic Degradation in Alq3- and Alq3:Qd-Based OLEDs", Materials Research Society 2010 Fall Meeting (2010.11, USA).

Y.Nakano, N.Matsuki, M.Lozac'h, K.Sakoda, M.Sumiya: "Deep-Level Optical Characterization of Free-Standing HVPE GaN Substrates and MOCVD GaN films Using Transparent Conductive Polyaniline Schottky Contacts", Materials Research Society 2010 Fall Meeting (2010.11, USA).

Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai: "Current Collapses in AlGaN/GaN Hetero-structures Studied by Deep-level Optical Spectroscopy", Materials Research Society 2010 Fall Meeting (2010.11, USA).

K.Nakamura, Y.Guo, J.Gao, Y.Nakano, H.Sugai: "Optical Luminescence of GaN Thin Films Induced by High Energy Electrons in Inductively-Coupled Plasmas", The 32nd International Symposium on Dry Process (2010.11, Tokyo).

K.Nakamura, Y.Guo, J.Gao, Y.Nakano, H.Sugai: "Irradiation of High Energy Electrons onto GaN Thin Films and Observation of its Optical Luminescence in Inductively-Coupled Plasmas", 7th International Conference on Reactive Plasmas/ 63rd Gaseous Electronics Conference/ 28th Symposium on Plasma Processing (2010.10, France).

Y.Nakano, N.Matsuki, Y.Irokawa, Masatomo Sumiya: "Deep-Level Characterization of n-GaN Using Transparent Polyaniline Schottky Contacts", The Third International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2010.6, Toyama).

Y.Nakano: "Deep-Level Optical Spectroscopy Study of Intrinsic Degradation in Alq3- and Alq3:Qd-Based Organic Light-Emitting Diodes", The Third International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2010.6, Toyama).

N.Matsuki,Y.Nakano, Y.Irokawa, M.Sumiya: "Heterointerface Properties of Novel Hybrid Solar Cells consisting of Transparent Conductive Polymers and III-Nitride Semiconductor", The International Conference on Nanophotonics 2010 (2010.5, Tsukuba).

Y.Guo, K.Nakamura, J.Shi, J.Zhang, Y.Nakano, H.Sugai: "Influence of High-Energy Secondary Electrons in Plasma Immersion Ion Implantation", 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2010.3, Nagoya).

Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: "Deep-Level Optical Spectroscopy Study of Band Gap States in n-GaN Epilayers Using Transparent Polyaniline Schottky Contacts", 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2010.3, Nagoya).

Y.Nakano, S.Saeki, T.Morikawa: "Optical bandgap widening of p-type Cu2O films by nitrogen doping", Materials Research Society 2009 Fall Meeting (2009.11, USA).

Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: "Deep-Level Optical Spectroscopy Study of Interface States in AlGaN/GaN Hetero-Structure", Materials Research Society 2009 Fall Meeting (2009.11, USA).

Y.Nakano: "Degradation in Alq3-Based OLEDs Studied by Deep-Level Optical Spectroscopy", Materials Research Society 2009 Fall Meeting (2009.11, USA).

Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: "Interface States in AlGaN/GaN hetero-structure Probed by Deep-level Optical Spectroscopy", 8th International Conference on Nitride Semiconductors (2009.10, Korea).

Y.Irokawa,M. Matsuki, M.Sumiya, Y.Sakuma, Y.Sumida, Y.Nakano: "Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen", 8th International Conference on Nitride Semicon6ductors (2009.10, Korea).

Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: "Deep-Level Optical Spectroscopy Investigation of Band Gap States in n-GaN Epilayers Using Transparent Polyaniline Schottky Contacts", 8th International Conference on Nitride Semiconductors (2009.10, Korea).

Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: "Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy", 13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (2009.9, USA).

Y.Nakano: "Deep-Level Optical Spectroscopy Investigation of Degradation in Alq3-Based OLEDs", 13th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (2009.9, USA).

Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: "Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy", 8th Topical Workshop on Heterostructure Microelectronics (2009.8, Nagano).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: "Interfacial Electronic States in Alq3/α-NPD-Based Organic Light-Emitting Diodes Studied by Deep-Level optical Spectroscopy", 12th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (2007.9, Germany).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: "Deep-Level Characterization of Tris(8-Hydroxyquiniline) Aluminum with and without Quinacridone Doping", 12th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (2007.9, Germany) .

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: "Deep-Level Optical Spectroscopy Investigation of Interfacial Trap States in Alq3/α-NPD-Based Organic Light-Emitting Diodes", 2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2007.6, Nagano).

T.Ohwaki, T.Morikawa, K.Aoki, K.Suzuki, T.Ito, R.Asahi, Y.Nakano, Y.Oota, Y.Mitsubori: "Fundamentals and Applications of Visible-Light Photocatalyst", Materials Research Society 2006 Fall Meeting (2006.11, USA).

Y.Nakano, T.Morikawa, T.Ohwaki: "Visible-Light Sensitivity for N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering", Materials Research Society 2006 Fall Meeting (2006.11, USA).

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki: "Deep-Level Optical Spectroscopy Investigation of Trap Levels in Tris(8-Hydroxyquiniline) Aluminum", Materials Research Society 2006 Fall Meeting (2006.11, USA)

Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki: "Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping", 2006 International Conference on Solid State Devices and Materials (2006.9, Yokohama).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Band-Gap Narrowing of TiO2 Films Induced by N Doping", 23rd International Conference on Defects in Semiconductors (2005.7, Hyogo).

Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: "Deep-Level Optical Spectroscopy Investigation of N-Doped TiO2", 4th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (2005.4, Tokyo). /invited/

Y.Irokawa, Y.Nakano, M.Ishiko, T.Kachi, J.Kim, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, C.-C.Pan, G.-T.Chen, J.-I.Chyi: "GaN Enhancement Mode Metal-Oxide Semiconductor Field Effect Transistors", International Workshop on Nitride Semiconductors 2004 (2004.4, USA).

Y.Nakano, T.Kachi, T.Jimbo: "N-Type Implantation Doping of GaN", 10th International Conference on Silicon Carbide and Related Materials (2003.10, France).

Y.Nakano, T.Kachi, T.Jimbo: "P-Type Implantation Doping of GaN", 10th International Conference on Silicon Carbide and Related Materials (2003.10, France).

Y.Nakano, T.Kachi, T.Jimbo: "Thermally Oxidized GaN Metal-Oxide-Semiconductor Structures", 10th International Conference on Silicon Carbide and Related Materials (2003.10, France).

Y.Nakano, T.Kachi, T.Jimbo: "Be+O Co-Implantation into GaN for P-Type Doping", 5th International Conference on Nitride Semiconductors (2003.5, Nara).

Y.Nakano, T.Kachi, T.Jimbo: "Interface Properties of Thermally Oxidized n-GaN MOS Structures", 5th International Conference on Nitride Semiconductors (2003.5, Nara).

Y.Nakano, T.Kachi, T.Jimbo: "Defects in N/Ge and N/Si Co-Implanted GaN", 1st International Symposium on Point Defect and Nonstoichiometry (2003.3, Sendai).

Y.Nakano, T.Jimbo: "Electrical Characterization of Acceptor Levels in Mg-Doped GaN", International Workshop on Nitride Semiconductors 2002 (2002.7, Germany).

Y.Nakano, T.Jimbo: "Inversion Behavior in SiO2/n-GaN Metal-Insulator-Semiconductor Structures", International Workshop on Nitride Semiconductors 2002 (2002.7, Germany).

Y.Nakano, T.Kachi, T.Jimbo: "Doping Characteristics and Structural Defects in N/Ge Co-Implanted in GaN", 28th International Symposium on Compound Semiconductors (2001.9, Tokyo).

Y.Nakano, T.Kachi, T.Jimbo: "N/Ge Co-Implantation into GaN for N-Type Doping", International Conference on Solid State Devices and Materials 2001 (2001, Tokyo).

T.Kachi, Y.Nakano: "Effect of N/Ge Sequential Implantation on the Ge Activation in GaN", 4th International Conference on Nitride Semiconductors (2001, USA).

Y.Nakano, T.Kachi, H.Tadano, R.K.Malhan, "Effect of C/B Co-Implantation on the B Acceptors in 4H-SiC", Materials Research Society 2000 Fall Meeting (2000, USA).

Others

Patents

US Patent 2008/0073652 (USA) "III-V HEMT DEVICES"

US Patent 7211839 (USA) "Group III Nitride Semiconductor Device"

EP1779438 (EU) "III-V HEMT DEVICES"

US Patent 6972459 (USA) "Metal oxide semiconductor transistor having a nitrogen cluster"

DE Patent 10225234 (Germany) "Metal oxide semiconductor transistor having a nitrogen cluster"

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