CHUBU UNIVERSITY
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GOTO Hideo

Profile

Title Professor
Belong to Dept. of Electrical and Electronic Engineering
Dept. of Electrical Engineering
Electrical and Electronic Engineering (graduate school)
Graduated Nagoya University, Graduate School of Engineering
Degree Dr. of Engineering, Nagoya University
Academic Institutional Membership The Japan Society of Applied Physics
The Physical Society of Japan
The Institute of Electrical Engineers of Japan
Field of Study Semiconductor Science, Electrical-Material Science
Research, Studies Research on II-VI Semiconductors, Research on new electrical materials for next generation
Curriculum Specialized Electromagnetics, Semiconductor Physics and Devices, Seminar B

Academic Papers, Critique

Voltage-current hysteretic characteristics in a Ni-Cd1-XMnXTe structure (joint work), Journal of Alloys and Compounds, 2008

MOVPE Growth, Magnetic and Crystallographic Studies of V,XZn1-XSe (joint work), Journal of Crystal Growth ,2007

Metal-organic vapor phase epitaxy growth and crystallographic study of vanadium-doped ZnSe (joint work), phys. stat. sol.(b), 2007

Sb-treatment effect of GaAs substrate on Sb-doped Cd1-XMnXTe grown by MOVPE (joint work), phys. stat. sol.(b), 2007

Electrical Conduction of Composites of Tin Oxide and Zinc Oxide in Hydrogen (joint work), Japanese Journal of Applied Physics, 2007

Antimony Treatment Effect on Cd1-XMnXTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy (joint work), Japanese Journal of Applied Physics, 2005

Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE (joint work), Materials Transactions, 2005

Deep hole trap levels of Sb-doped ZnSe grown by MOVPE (joint work), Journal of Crystal Growth, 2003

Photoacoustic spectra of Sb-doped ZnSe (joint work), Materials Lerrers, 2001

MOVPE growth and Characterization of Mn-doped ZnSe films (joint work), Journal of Crystal Growth, 2001

Electrical Properties of Sb-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy (joint work), J. of Crystal growth, 2000

Photoluminescence of ZnSe Grown by Photo-Assisted Metalorganic Vapor Phase Epitaxy (joint work), J. of Institute of Science and Technology Research, 2000

Influence on Insulator Doping on Superconducting Properties of Bi-System Superconductor (joint work), Advances in Science and Technology, 1999

Effects of Impurities on Critical Current Density in Bi-System Superconductors (joint work), Memoirs of College of Engineering, Chubu Univ., 1998

Fundamental Characteristics of DRAM Capacitor Application of PLZT Ultrathin Films Prepared by MOCVD (joint work), Electrical Engineering in Japan, Vol. 122, No. 1, 1998

The Impurity Doping in Widegap Semiconductors (joint work), Solid State Phenomena, 1998

Acceptor Level of Sb in ZnSe (joint work), Nonlinear Optics, 1998

Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe (joint work), Japanese J. of Appl. Physics, 1998

Deep Hole Trap Level of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy (joint work), J. of Crystal Growth, 1997

Comparative Study of C-V and Transconductance of a Si d-Doped GaAs FET Structure, Japanese J. of Appl. Physics, 1997

Lectures, Symposium, Presentation

Electrical Properties of Sb-doped ZnSe Grown by Photo-Induced MOVPE, The First Asian Conference on Crystal Growth, and Crystal Technology, CGCT-1, Sendai, 2000

MOVPE Growth and Characterization of Mn-Doped ZnSe Films, The First Asian Conference on Crystal Growth, and Crystal Technology, CGCT-1, Sendai, 2000

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